mjd31/31c ? npn epitaxial silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com mjd31/31c rev. a4 1 february 2012 mjd31/31c npn epitaxial silicon transistor features ? general purpose amplifier ? low speed switching applications ? load formed for surface moun t application (no suffix) ? straight lead (i-pak, ?- i? suffix) ? electrically similar to popular tip31 and tip31c absolute maximum ratings t a = 25 c unless otherwise noted ordering information symbol parameter value units v cbo collector-base voltage : mjd31 : mjd31c 40 100 v v v ceo collector-emitter voltage : mjd31 : mjd31c 40 100 v v v ebo emitter-base voltage 5 v i c collector current (dc) 3 a i cp collector current (pulse) 1 a i b base current 1 a p c collector dissipation (t c = 25 c) 15 w collector dissipation (t a = 25 c) 1.56 w t j junction temperature 150 c t stg storage temperature - 65 to 150 c part number marking packag e packing method remarks MJD31CTF mjd31c d-pak tape & reel mjd31citu mjd31c-i i-pak tube 1.base 2.collector 3.emitter d-pak i-pak 11
mjd31/31c ? npn epitaxial silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com mjd31/31c rev. a4 2 electrical characteristics t a = 25 c unless otherwise noted * pulse test: pw 300 s, duty cycle 2% symbol parameter test condition min. max. units v ceo (sus) * collector-emitter sustaining voltage : mjd31 : mjd31c i c = 30ma, i b = 0 i c = 30ma, i b = 0 40 100 v v i ceo collector cut-off current : mjd31 : mjd31c v ce = 40v, i b = 0 v ce = 60v, i b = 0 50 50 a a i ces collector cut-off current : mjd31 : mjd31c v ce = 40v, v be = 0 v ce = 100v, v be = 0 20 20 a a i ebo emitter cut-off current v be = 5v, i c = 0 1 ma h fe * dc current gain v ce = 4v, i c = 1a v ce = 4v, i c = 3a 25 10 50 v ce (sat) * collector-emitter saturation voltage i c = 3a, i b = 375ma 1.2 v v be (on) * base-emitter on voltage v ce = 4a, i c = 3a 1.8 v f t current gain bandwidth product v ce = 10v, i c = 500ma 3 mhz
mjd31/31c ? npn epitaxial silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com mjd31/31c rev. a4 3 typical performan ce characteristics figure 1. dc current gain figure 2. base-emitter satu ration voltage collector-emitter saturation voltage figure 3. collector capacitance figure 4. turn on time figure 5. turn off time figure 6. safe operating 0.01 0.1 1 10 1 10 100 1000 v ce = 2v h fe , dc current gain i c [a], collector current 1e-3 0.01 0.1 1 10 0.01 0.1 1 10 i c = 10 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [a], collector current 0.1 1 10 100 1 10 100 1000 c ob [pf], capacitance v cb [v], collector base voltage 0.01 0.1 1 10 0.1 1 t r , v cc =30v t r , v cc =10v t c = 10.i b t d , v be (off)=2v t r , t d [ s], turn on time i c [a], collector current 0.01 0.1 1 10 0.1 1 t stg t f , v cc =30v t c = 10.i b t f , v cc (off)=10v t f ,t stg [ s], turn off time i c [a], collector current 1 10 100 1000 0.01 0.1 1 10 mjd31 1 0 0 s 5 0 0 s mjd31c 1 m s d c i cp (max) i c (max) i c [a], collector current v ce [v], collector-emitter voltage
mjd31/31c ? npn epitaxial silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com mjd31/31c rev. a4 4 typical performan ce characteristics (continued) figure 7. power derating 0 25 50 75 100 125 150 175 0 5 10 15 20 p c [w], power dissipation t c [ o c], case temperature
mjd31/31c ? npn epitaxial silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com mjd31/31c rev. a4 5 physical dimensions d-pak dimensions in millimeters
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